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研究方向:
1. 高压大功率IGBT器件封装、热管理和可靠性评估及提升技术研究(Packaging technology, thermal management, reliability evaluation and improvement of high power IGBT devices)

2. 功率半导体器件功率循环等可靠性测试方法、加速老化机理和理论研究(Power cycling reliability test method, accelerating aging mechanism and basic theory for power devices )

3. 功率半导体器件长期可靠性评估、寿命模型建立和失效机理研究(Long term reliability and lifetime modelling, and failure mechanism analysis for power devices)

4.器件在线状态监测研究和寿命预测技术研究(Online monitoring and lifetime prediction for power devices)

5.可靠性测试及实际运行过程中器件结温的准确测量方法研究
(Online Junction temperature method and evaluation in reliability test and real working condition)
  1. 个人简介及主要荣誉称号
  2. 教学与人才培养情况
  3. 主要科研项目情况
  4. 主要获奖
  5. 代表性论著
  邓二平，男，1989年6月生。2013年于哈尔滨工业大学电气工程及其自动化专业获取学士学位，2018年于华北电力大学电气工程获得工学博士学位。IEEE协会会员，电气工程顶级期刊（IEEE Transactions on Industry Electrical Magazine, Industry Electronics, Power Electronics等）审稿专家，MicDAT国际会议技术委员会成员等。2018年外派德国开姆尼茨工业大学(Chemnitz University of Technology)从事博士后研究工作。

  主要从事高压大功率电力电子器件封装、热管理、结温准确测量和可靠性等相关研究工作，针对我国国产压接型IGBT器件进行了大量的基础理论、仿真分析和实验测量等工作，设计并验证了相关的封装结构，同时，创新性的提出了新的封装结构、多物理场建模方法和测量方法，相关领域发表论文30余篇，其中SCI检索论文7篇，申请发明专利10余项，受邀编写两本英文专业书籍的部分章节。同时，还从事电力电子器件的结温测量和长期可靠性相关研究、针对我国电力系统用压接型IGBT器件可靠性测试的空白，搭建了全球功率等级最大的功率循环测试等可靠性测试装备。目前主要从事器件的功率循环可靠性测试、失效机理研究、可靠性提升技术、寿命模型建立、寿命评估和寿命预测等研究。
1. 华北电力大学中央高校基本科研业务费，面上项目，高压大功率IGBT器件老化耦合机理研究，2019.01-2020.12，10万元，在研，主持

2. 华北电力大学“双一流“建设项目-个人项目，高压大功率IGBT器件结温准确测量技术研究，2018.07-2019.12，10万元，在研，主持

3. 国家自然科学基金智能电网联合基金，U1766219, 压接型IGBT器件封装的多物理场相互作用机制，2018.01-2021.12，299万元，在研，参加

4. 国家自然科学基金面上项目，51477048，高压大电流IGBT模块内部多物理场分析与拓扑优化研究，2015.01-2018.12，90万元，己结题，参加
[1] Deng, E.*, Zhao Z, Huang Y.: “Optimization of the thermal contact resistance within press pack IGBTs”, in Sergey Y. Yurish. (Editor): “Advance in Microelectronics: Reviews, Volume1” (International Frequency Sensor Association Publishing, 2017, 1st edn.), PP. 329-357.- Chapter 13

[2] Deng, E.*, Zhao, Z, Li J, Huang Y.: “Clamping Force Distribution within Press Pack IGBTs”, in Dr. Dhanasekaran Vikraman. (Editor): “Field Effect Transistors – Materials, Fabrication and Application” (InTechOpen Publishing, 2018, 1st edn.) - Chapter 5

[3] Deng, E.*, Zhao, Z., Zhang, P., Luo, X., Li, J., Huang, Y., “Study on the Method to Measure Thermal Contact Resistance Within Press Pack IGBTs”, IEEE Transactions on Power Electronics, vol. 34, no. 2, pp. 1509-1517, 2019.

[4] Deng, E.*, Zhang, C., Ying, X., Zhao, Z., Huang, Y., “混合型直流断路器用 IGBT 测试平台建模与分析 [Modeling and Analysis of IGBT Test Platform for Hybrid DC Circuit Breaker]”, Semiconductor Technology, vol. 44, no. 2, pp. 154-160, 2019.

[5] Deng, E*., Shen, Y., Zhao, Z., Li, J., Huang, Y., “The Algorithm and Software Implementation of the Thermal Transient Testing Technology Applied in High-Power Electronics”, Sensors & Transducers, vol. 227, no. 11, pp. 60-66, 2018.

[6] Deng, E.*, Zhao, Z., Zhang, P., Li, J., Huang, Y., “Study on the Method to Measure the Junction-to-Case Thermal Resistance of Press-Pack IGBTs,” IEEE Transactions on Power Electronics, vol. 33, no. 5, pp. 4352-4361, 2018.

[7] Deng, E.*, Zhang, J., Zhao, Z., Chen, J., Li, J., Huang, Y., “Influence of the clamping force on the power cycling lifetime reliability of press pack IGBT sub-module,” The Journal of Engineering, 2018.

[8] Deng, E.*, Zhao, Z., Lin, Z., Han, R., Huang, Y., “Influence of Temperature on the Pressure Distribution Within Press Pack IGBTs”, IEEE Transactions on Power Electronics, vol. 33, no. 7, pp. 6048-6059, 2018.

[9] Guo, N., Deng, E.*, Zhao, Z., Chen, J., Yang, F., Huang, Y., “4H-SiC 中点缺陷的第一性原理研究 [Study on the First Principle of Point Defects in 4H-SiC]”, Semiconductor Technology, vol. 43, no.1, pp. 63-69, 2018.

[10] Deng, E.*, Chen, J., Zhao, Y., Zhao, Z., Zhao, Z., Huang, Y., “IGBT 封装形式对结温测量精度的影响 [Influence of IGBT Package Types on the Accuracy of Junction Temperature Measurement]”, Semiconductor Technology, vol. 43, no. 2, pp. 956-963, 2018.

[11] Zhang, J., Deng, E.*, Zhao, Z., Li, J., Huang, Y, “压接型 IGBT 器件单芯片子模组疲劳失效的仿真 [Simulation on Fatigue Failure of Single IGBT Chip Module of Press-Pack IGBTs]”, Transactions of China Electrotechnical Society, vol. 33, no. 18, pp. 4277-4285, 2018.

[12] Deng, E.*, Zhao, Z., Zhang, P., Li, J., Huang, Y. “Study on the methods to measure the junction-to-case thermal resistance of IGBT modules and press pack IGBTs”, Microelectronics Reliability, vol. 79, pp. 248-256, 2017.

[13] Deng, E.*, Zhao, Z., Zhang, P., Huang, Y. Li, J., “Optimization of the thermal contact resistance within press pack IGBTs”, Microelectronics Reliability, vol. 69, pp. 17-28, 2017.

[14] Deng, E.*, Zhao, Z., Xin, Q., Zhang, J., Huang, Y., “Analysis on the difference of the characteristic between high power IGBT modules and press pack IGBTs”, Microelectronics Reliability, vol. 78, pp. 25-37, 2017.
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